HeartBeam, Inc. (BEAT): Departure of Directors or Certain Officers; Election of Directors; Appointment of Certain Officers: Compensatory Arrangements of Certain Officers

SK Hynix is considering options for its Chongqing, China semiconductor packaging and testing facility, including possibly bringing in an investor to accelerate growth. People familiar said a potential stake sale could value the plant at about US$3 billion and SK Hynix may keep a minority stake. Separately, it plans a 54 trillion won (US$38 billion) South Korea expansion for DRAM and NAND.

Zillow Group said Aug. 4 it will cut more than 500 jobs, about 7% of staff, its second layoff round this year after 200 cuts in January. The company reported Q2 2026 revenue of $772 million, up 18% year over year, but a $4 million net loss driven by a $36 million restructuring charge, citing a flat housing market.

The Trump administration said it will invest $3 billion in US critical-minerals projects to support defense supply. The Pentagon’s Office of Strategic Capital plans conditional loans of $1.4B to Sila Nanotechnologies, $400M to Sunrise Energy Metals, and $150M to Niron Magnetics. The Export-Import Bank will lend $58M to several firms, while DOE and Pentagon grants target mining education.

Strategy Inc (MSTR) says it has launched a Bitcoin-backed preferred stock structure, backed by its Bitcoin holdings, and raised about $15 billion, according to the company. Management describes it as a “capital flywheel” to fund future digital-asset initiatives. The article notes Strategy’s recent large net losses and highlights upcoming dividend and cash-flow tests.

SK Hynix said it will invest 54 trillion won (about $38.1 billion) to build two new memory-chip fabs. It plans 35.2 trillion won for the Y2 fab in Yongin and 19.1 trillion won for M17 in Cheongju, aimed at demand expected in 2029 and beyond, driven by AI memory growth.

SK hynix approved construction of two new memory fabs costing 54 trillion won (about $38.3B). The Yongin Y2 DRAM fab will cost $25B, with groundbreak in July 2027 and first cleanroom in June 2029, focused on DRAM and HBM. A separate NAND fab is expected to open its first cleanroom in Dec 2028. Samsung is also developing stackable memory tech.