Samsung launches KAIROS project to build 2nm and 4nm foundry fabs at Giheung campus

Samsung Electronics announced a large‑scale investment to convert its idle Giheung campus into an advanced foundry hub for 2‑nanometer and 4‑nanometer chips, named the KAIROS project. The plan includes constructing new fabs, converting part of Line 6 into an advanced packaging facility, and ordering dozens of EUV lithography tools. The move targets the rising demand for high‑bandwidth memory (HBM) from AI data centers and aims to expand Samsung’s HBM base‑die supply.

The project is expected to generate equipment orders worth up to 30 trillion won for EUV lithography and related suppliers, creating a boost for the semiconductor supply chain. By adding advanced‑node capacity, Samsung plans to increase HBM shipments at an average annual rate of 52 % through 2028, which could strengthen its position in the AI‑driven memory market.

  • 1Samsung will invest about 25 trillion won (approximately $18.7 billion) in the KAIROS project, with total costs potentially reaching up to 30 trillion won (approximately $22.4 billion) when packaging conversion is included.
  • 2The investment includes purchase quotations for EUV lithography tools worth 8 trillion to 10 trillion won (approximately $6.0 billion to $7.5 billion).
  • 3The new fab will use 2‑nm and 4‑nm processes to produce base dies for HBM4, HBM4E and future HBM5 generations.
  • 4Industry sources expect Samsung’s HBM shipments to grow at an average annual rate of 52 % on a bit basis over the three years through 2028.
  • 5Demolition of the former Samsung Advanced Institute of Technology (SR5) and College of Engineering (CDI) buildings at Giheung was completed in early November 2026.

Sources