XMax to acquire Hexa Creation, adding 1200‑V vertical GaN power semiconductor technology
XMax Inc. announced on Oct. 9, 2026 that it has signed a definitive share purchase agreement to buy 100 % of Hexa Creation Inc. The target develops 1200‑volt vertical gallium‑nitride (GaN) power devices for AI data‑center and other high‑voltage applications. The acquisition is intended to extend XMax’s artificial‑intelligence strategy into power‑infrastructure markets.
Why it matters
The deal diversifies XMax’s revenue sources by entering the fast‑growing GaN power‑semiconductor market, which Yole projects to reach $3.0 billion by 2030. Investors will watch how the new technology contributes to XMax’s future earnings as AI data‑center power demand rises.
Key facts
- 1XMax entered a definitive share purchase agreement to acquire 100 % of the issued and outstanding shares of Hexa Creation. globenewswire.com
- 2The acquisition agreement was announced on Oct. 9, 2026. globenewswire.com
- 3Hexa Creation’s technology centers on a 1200‑V vertical GaN trench MOSFET for high‑voltage, high‑power applications. globenewswire.com
- 4Yole Group forecasts the global GaN power‑device market to grow to $3.0 billion by 2030. globenewswire.com
- 5The same Yole report estimates a compound annual growth rate of approximately 42 % for the market. globenewswire.com
- 6Financial terms of the transaction will be disclosed in a Form 8‑K filing with the SEC on Oct. 9, 2026. tradingview.com
Summary written by AlphAI AI Desk from 6 of 6 sources. Not investment advice. Figures are as stated by the linked sources.