Samsung to build second Texas fab for AMD and Nvidia HBM base dies

Samsung Electronics will construct a second semiconductor fab in Taylor, Texas, dedicated to producing base dies for high‑bandwidth memory (HBM) chips used by AMD and Nvidia. Construction is slated to start this month, with equipment installation planned for February 2029 and mass production targeted for 2030. The plant will run on Samsung’s 2‑nanometre process and is expected to be about 2.7 million square feet, roughly one‑and‑a‑half times larger than its first Texas facility. Most of the booked capacity is for AMD, while Nvidia also has orders.

The new fab secures a domestic supply source for AMD and Nvidia HBM components, potentially reducing reliance on overseas foundries and supporting AI‑related demand. Investors in AMD and Nvidia may see improved supply chain resilience, while Samsung’s foundry unit could move toward profitability as indicated by Kiwoom Securities.

  • 1Construction of the second Texas plant is scheduled to begin this month (November 2026).
  • 2Equipment installation is expected to start in February 2029.
  • 3Mass production is targeted for 2030.
  • 4The fab will use Samsung's 2‑nanometre process technology.
  • 5The facility will cover about 2.7 million square feet, roughly 1.5 times the size of Samsung's first Texas plant.
  • 6All production capacity is booked, with the majority of orders from AMD.

Sources